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cystech electronics corp. spec. no. : c789h8 issued date : 2010.09.23 revised date : 2012.11.12 page no. : 1/11 MTB04N03H8 cystek product specification n-channel logic level enhancement mode power mosfet MTB04N03H8 bv dss 30v i d 75a r ds(on) @v gs =10v, i d =30a 3.2 m (typ) r ds(on) @v gs =4.5v, i d =25a 4.9 m (typ) description the MTB04N03H8 is a n-channel enhancement-mode mosfet, providing the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost effectiveness. features ? single drive requirement ? low on-resistance ? fast switching characteristic ? dynamic dv/dt rating ? repetitive avalanche rated ? pb-free lead plating and halogen-free package symbol outline MTB04N03H8 dfn5 6 pin 1 g gate d drain s source
cystech electronics corp. spec. no. : c789h8 issued date : 2010.09.23 revised date : 2012.11.12 page no. : 2/11 MTB04N03H8 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v ds 30 gate-source voltage v gs 20 v continuous drain current @ t c =25 c, v gs =10v 75 continuous drain current @ t c =100c, v gs =10v i d 47 pulsed drain current i dm 160 *1 avalanche current i as 53 a avalanche energy @ l=0.1mh, i d =53a, r g =25 e as 140 repetitive avalanche energy @ l=0.05mh e ar 40 *2 mj t c =25 50 total power dissipation t c =100 p d 20 w operating junction and storage temp erature range tj, tstg -55~+150 c 100% uis testing in condition of v d =15v, l=0.1mh, v g =10v, i l =40a, rated v ds =30v n-ch thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 2.5 c/w thermal resistance, junction-to-ambient, max r th,j-a 50 *3 c/w note : 1. pulse width limited by maximum junction temperature 2. duty cycle 1% 3. surface mounted on 1 in 2 copper pad of fr-4 board, t 10s; 125 c/w when mounted on minimum copper pad. characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 30 - - v v gs =0, i d =250 a v gs(th) 1.0 1.7 3.0 v v ds = v gs , i d =250 a g fs *1 - 25 - s v ds =5v, i d =24a i gss - - 100 na v gs = 20 - - 1 v ds =24v, v gs =0 i dss - - 25 a v ds =20v, v gs =0, tj=125 c - 3.2 4 m v gs =10v, i d =30a r ds(on) *1 - 4.9 6.6 m v gs =4.5v, i d =24a dynamic ciss - 3925 - coss - 438 - crss - 385 - pf v gs =0v, v ds =15v, f=1mhz
cystech electronics corp. spec. no. : c789h8 issued date : 2010.09.23 revised date : 2012.11.12 page no. : 3/11 MTB04N03H8 cystek product specification characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions qg (v gs =10v) *1, 2 - 38 - qg (v gs =4.5v) *1, 2 - 19 - qgs *1, 2 - 5 - qgd *1, 2 - 12 - nc v ds =15v, v gs =10v, i d =30a t d(on) *1, 2 - 19 - tr *1, 2 - 17 - t d(off) *1, 2 - 40 - t f *1, 2 - 13 - ns v ds =15v, i d =24a, v gs =10v, r gs =2.7 rg - 1.3 - v gs =15mv, v ds =0v, f=1mhz source-drain diode i s *1 - - 75 i sm *3 - - 150 a v sd *1 - - 1.3 v i f =30a, v gs =0v trr - 30 - ns qrr - 10 - nc i f =i s , di f /dt=100a/ s note : *1.pulse test : pulse width 300 s, duty cycle 2% *2.independent of operating temperature *3.pulse width limited by maximum junction temperature. ordering information device package shipping MTB04N03H8 dfn5 6 (pb-free lead plating) 3000 pcs / tape & reel
cystech electronics corp. spec. no. : c789h8 issued date : 2010.09.23 revised date : 2012.11.12 page no. : 4/11 MTB04N03H8 cystek product specification recommended soldering footprint unit : mm
cystech electronics corp. spec. no. : c789h8 issued date : 2010.09.23 revised date : 2012.11.12 page no. : 5/11 MTB04N03H8 cystek product specification typical characteristics typical output characteristics 0 40 80 120 160 0246810 v ds , drain-source voltage(v) i d , drain current(a) 10v, 9v, 8v, 7v, 6v, 5v v gs =3v v gs =4v v gs = 2v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -100 -50 0 50 100 150 200 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 100 1000 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =10v v gs =2.5v v gs =3v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 04812162 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=125c static drain-source on-state resistance vs gate-source voltage 0 10 20 30 40 50 60 70 80 90 100 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.8 1.2 1.6 2 2.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) r ds(on) , static drain-source on-state resistance(m) v gs =10v, i d =30a r ds( on) @tj=25c : 3.2 m v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =30a
cystech electronics corp. spec. no. : c789h8 issued date : 2010.09.23 revised date : 2012.11.12 page no. : 6/11 MTB04N03H8 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 tj, junction temperature(c) v gs(th) , normalizedthreshold voltage i d =250 a forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 i d , drain current(a) g fs , forward transfer admittance(s) v ds =10v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 0 1020304 total gate charge---qg(nc) v gs , gate-source voltage(v) 0 v ds =15v i d =30a v ds =5v v ds =10v v ds =15v maximum safe operating area 0.1 1 10 100 1000 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 100ms 1ms 100 s 1s r ds( on) limit t c =25c, tj=150c, v gs =10v, r jc =25c/w single pulse maximum drain current vs case temperature 0 10 20 30 40 50 60 70 80 90 25 50 75 100 125 150 175 t c , case temperature(c) i d , maximum drain current(a) v gs =10v, r jc =2.5c/w
cystech electronics corp. spec. no. : c789h8 issued date : 2010.09.23 revised date : 2012.11.12 page no. : 7/11 MTB04N03H8 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 20 40 60 80 100 120 024681012 v gs , gate-source voltage(v) i d , drain current (a) v ds =10v transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r jc (t)=r(t)*r jc 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *r jc (t) 4.r jc =2.5 c/w
cystech electronics corp. spec. no. : c789h8 issued date : 2010.09.23 revised date : 2012.11.12 page no. : 8/11 MTB04N03H8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) 100 c 150 c ? time(ts min to ts max ) 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c789h8 issued date : 2010.09.23 revised date : 2012.11.12 page no. : 9/11 MTB04N03H8 cystek product specification dfn5 6 dimension (c forming) marking : 8-lead dfn5 6 plastic package cys package code : h8 device name b04 n03 date code millimeters inches millimeters inches dim min. min. max. dim min. max. min. max. max. a 0.900 1.000 0.035 0.039 k 1.190 1.390 0.047 0.055 a3 0.254 ref 0.010 ref b 0.350 0.450 0.014 0.018 d 4.944 5.096 0.195 0.201 e 1.270 typ. 0.050 typ. e 5.974 6.126 0.235 0.241 l 0.559 0.711 0.022 0.028 d1 3.910 4.110 0.154 0.162 l1 0.424 0.576 0.017 0.023 e1 3.375 3.575 0.133 0.141 h 0.574 0.726 0.023 0.029 d2 4.824 0.190 0.196 10 12 10 12 4.976 e2 5.674 5.826 0.223 0.229 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0.
cystech electronics corp. spec. no. : c789h8 issued date : 2010.09.23 revised date : 2012.11.12 page no. : 10/11 MTB04N03H8 cystek product specification dfn5 6 dimension (g forming) millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.80 1.00 0.031 0.039 e 5.70 5.90 0.224 0.232 a1 0.00 0.05 0.000 0.002 e 1.27 bsc 0.050 bsc b 0.35 0.49 0.014 0.019 h 5.95 6.20 0.234 0.244 c 0.254 ref 0.010 ref l1 0.10 0.18 0.004 0.007 d 4.90 5.10 0.193 0.201 g 0.60 ref 0.024 ref f 1.40 ref 0.055 ref k 4.00 ref 0.157 ref notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. marking: 8- lead power pak plastic packag e c 8 ystek package code: h date code device name b04 n03 8-lead dfn5 6 plastic package cys package code : h8
cystech electronics corp. spec. no. : c789h8 issued date : 2010.09.23 revised date : 2012.11.12 page no. : 11/11 MTB04N03H8 cystek product specification dfn5 6 dimension (n forming) marking: 8 device name date code -lead power pak plastic packag e c 8 ystek package code: h 8-lead dfn5 6 plastic package cys package code : h8 b04 n03 millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.90 1.00 0.035 0.039 e2 3.18 3.54 0.125 0.139 b 0.35 0.45 0.014 0.018 h 0.51 0.71 0.020 0.028 c 0.21 0.34 0.008 0.013 k 1.10 - 0.043 - d - 5.10 - 0.201 l 0.51 0.71 0.020 0.028 d1 4.80 5.00 0.189 0.197 l1 0.06 0.20 0.002 0.008 d2 3.82 4.02 0.150 0.158 l2 - 0.10 - 0.004 e 1.17 1.37 0.046 0.054 p 1.00 1.20 0.039 0.047 e 5.90 6.10 0.232 0.240 8 12 8 12 e1 5.70 5.80 0.224 0.228 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .

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